Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
نویسندگان
چکیده
منابع مشابه
Electrostatically confined quantum rings in bilayer graphene.
We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by position-dependent doping. The energy levels have a magnetic field (B(0)) dependence that is strikingly distinct from that of usual semiconductor quantum rings. In...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2016
ISSN: 2168-6734
DOI: 10.1109/jeds.2016.2539919